Oct,08

IEC 62899-203:2018 pdf download

IEC 62899-203:2018 pdf download

IEC 62899-203:2018 pdf download.Printed electronics – Part 203: Materials – Semiconductor ink
1 Scope
This part of IEC 62899 defines terms and specifies standard methods for characterisation and evaluation. This document is applicable to semiconductor inks and semiconductive layers that are made from semiconductor inks.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62860, Test methods for the characterization of organic transistors and materials ISO 5-2, Photography and graphic technology – Density measurements – Part 2: Geometric conditions for transmittance density ISO 5-3, Photography and graphic technology – Density measurements – Part 3: Spectral conditions ISO 1 24, Latex, rubber – Determination of total solids content ISO 291 , Plastics – Standard atmospheres for conditioning and testing ISO 304, Surface active agents – Determination of surface tension by drawing up liquid films ISO 489:1 999, Plastics – Determination of refractive index ISO 758, Liquid chemical products for industrial use – Determination of density at 20°C ISO 1 1 83-1 , Plastics – Methods for determining the density of non-cellular plastics – Part 1: Immersion method, liquid pyknometer method and titration method ISO 2555, Plastics – Resins in the liquid state or as emulsions or dispersions – Determination of apparent viscosity by the Brookfield Test method ISO 2592, Petroleum and related products – Determination of flash and fire points – Cleveland closed cup method ISO 271 9, Determination of flash point – Pensky-Martens closed cup method ISO 281 1 -1 , Paints and varnishes – Determination of density – Part 1: Pyknometer method
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62860 and the following apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: • IEC Electropedia: available at http://www.electropedia.org/ • ISO Online browsing platform: available at http://www.iso.org/obp NOTE The terms in italic font are those defined in Clause 3. 3.1 semiconductive material ingredient of a printing or coating material, which itself is electrically semiconductive 3.2 semiconductor ink liquid in which one or more particles, small molecules or polymers are dissolved or dispersed, and which becomes an electrically semiconductive layer through solvent removal or post treatment such as UV, photonic, or thermal processing 3.3 semiconductive layer film-like semiconductive body of material made of semiconductor ink (3.2), which is printed or coated on a substrate, followed, as necessary, by using a post treatment such as UV, photonic, or thermal processing 3.4 semiconductor film substrate (sheet or roll) with semiconductive layer (3.3) 3.5 solid content mass fraction of an ingredient which effectively functions as a semiconductive material dissolved or dispersed in a solvent to form a semiconductor ink (3.2) Note 1 to entry: In some instances the ink may include insulating materials, sometimes referred to as binders, or other additives included to improve the film formation during coating or printing. 3.6 non-volatile content mass fraction of residue obtained by evaporation of the volatile solvent under specific conditions, in semiconductor ink (3.2) 3.7 dispersion heterogeneous system in which fine separated materials are distributed uniformly in other materials 3.8 flash point lowest liquid temperature at which, under certain standardized conditions, a liquid gives off vapours in quantity such as to be capable of forming an ignitable vapour/air mixture [SOURCE: IEC 60050-21 2:201 0, 21 2-1 8-05] 3.9 field effect mobility majority carrier mobility of semiconductive material derived through the transfer curve measurement of a fabricated TFT device Note 1 to entry: The field effect mobility is usually derived from either saturation or linear approximations. Note 2 to entry: Field effect mobility is given in units of cm 2 /V·s. 3.1 0 thin-film transistor TFT switching device made from three electrodes (source, drain and gate) and semiconducting and insulating layers wherein potentials applied to a gate electrode modulate charge carriers on the opposite side of the insulating layer situated between the gate and semiconductive layer

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