IEC 63068-1:2019 pdf download

IEC 63068-1:2019 pdf download.Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
1 Scope
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: • IEC Electropedia: available at http://www.electropedia.org/ • ISO Online browsing platform: available at http://www.iso.org/obp 3.1 silicon carbide SiC semiconductor crystal composed of silicon and carbon, which exhibits a large number of polytypes such as 3C, 4H, and 6H Note 1 to entry: A symbol like 4H gives the number of periodic stacking layers (2, 3, 4,…) and the crystal symmetry (H = hexagonal, C = cubic) of each polytype.3.2 3C-SiC SiC crystal with zinc blende structure, in which three Si-C layers are periodically arranged along the <1 1 1 > direction 3.3 4H-SiC SiC crystal showing a hexagonal symmetry, in which four Si-C layers are periodically arranged along the crystallographic c-axis Note 1 to entry: The crystal structure of 4H-SiC is similar to wurtzite with a unit cell having four periodical occupied sites along the <0001 > direction.3.4 6H-SiC SiC crystal showing a hexagonal symmetry, in which six Si-C layers are periodically arranged along the crystallographic c-axis Note 1 to entry: The crystal structure of 6H-SiC is similar to wurtzite with a unit cell having six periodical occupied sites along the <0001 > direction. 3.5 crystal plane plane, usually denoted as (hkl), representing the intersection of a plane with the a-, b- and c- axes of the unit cell at distances of 1 /h, 1 /k and 1 /l, where h, k and l are integers Note 1 to entry: The integers h, k and l are usually referred to as the Miller indices of a crystal plane. Note 2 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices are frequently used for planes (hkil). [SOURCE: ISO 241 73:2009, 3.2, modified – Note 2 to entry has been entirely redrafted.] 3.6 crystal direction direction, denoted as [uvw], representing a vector direction in multiples of the basis vectors describing the a-, b- and c-axes Note 1 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices [uvtw] are frequently used for crystal directions. Note 2 to entry: Families of symmetrically equivalent directions are written by <uvw> and <uvtw> for cubic and hexagonal symmetries, respectively. [SOURCE: ISO 241 73:2009, 3.3, modified – Note 1 to entry and Note 2 to entry have been added.] 3.7 polytypism phenomenon where a material occurs in several structural modifications, each of which can be regarded as built up by stacking layers of identical structure and chemical composition 3.8 polytype one of the modifications of monocrystalline material which shows polytypism 3.9 substrate material on which homoepitaxial layer is deposited 3.1 0 homoepitaxial layer thin monocrystalline film epitaxially-formed on a substrate of the same material and crystallographic orientation, inheriting the atomic order of the substrate3.1 3 basal plane plane perpendicular to the crystallographic c-axis in a hexagonal crystal 3.1 4 prism plane plane parallel to the crystallographic c-axis in a hexagonal crystal 3.1 5 crystallographic c-axis principal axis in a hexagonal crystal 3.1 6 defect crystalline imperfection Note 1 to entry: Defect of SiC homoepitaxial wafers including point defect, extended defects, surface defects, and others. 3.1 7 crystal defect local alteration of crystal periodicity Note 1 to entry: Crystal defect is generally classified into point and extended defects.